Indexed by: Journal paper

First Author: 温晋宇,付雨阳

Correspondence Author: TONG HAO,李祎

Co-author: 缪向水,王浩,马国坤,左文斌,朱启航,杨岭,WANG LUN

Journal: IEEE Electron Device Letters

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 44

Issue: 5

Page Number: 853-856

Key Words: True random number generators, ovonic threshold switching, memristor, high throughput

DOI number: 10.1109/led.2023.3259000

Date of Publication: 4500-05-01

Abstract: True random number generators (TRNGs) based on threshold switching memristors emerge as a building block for secure electronics. However, the throughputs reported in previous studies have a stark gap with the requirements of practical applications (>1 Mb/s). Here, we implement a high-speed TRNG with a GeTex ovonic threshold switching (OTS) memristor. The TRNG throughput reaches 2.22 Mb/s for a single cell, which is 2.2 times faster than the prior state-of-the-art threshold-switchingbased TRNG. In addition, the TRNG endurance of 2 × 109 bits was achieved, and the random bits passed 12 tests in the National Institute of Standards and Technology statistical test suite. Our results demonstrated that the OTS-based TRNG could provide a high–throughput and highly secure solution for edge applications

Links to published journals: https://ieeexplore.ieee.org/abstract/document/10076428