·Paper Publications
- [1] 朱荣江,缪向水,高科,赵锐哲.TONG HAO.Atomic Layer Deposition of GeSb2Te4 Thin Films for Reliable Phase Change Memory with a High Dynamic Range.[J].IEEE Electron Device Letters,4513,
- [2] 赵锐哲,李鑫,缪向水.TONG HAO,缪向水.A nanoribbon device for analog phase change memory targeting neural network applications.[J].Applied Physics Letters,4512,(3):033503
- [3] 冯择阳,王校杰,缪向水,蔡经纬.TONG HAO.All-van der Waals stacking ferroelectric field-effect transistor based on In2Se3 for high-density memory.[J].Science China Information Sciences,4511,(8):182401
- [4] WANG LUN,缪向水,TONG HAO,陈江西,刘梓轩,温晋宇.TONG HAO.Thermally Stable and High-Speed Ge-Te Based Ovonic Threshold Switching Selector With a Ge Intercalated Structure.[J].IEEE Electron Device Letters,4504,(7):1096-1099
- [5] 温晋宇,付雨阳,缪向水,王浩,马国坤,左文斌,朱启航,杨岭,WANG LUN.TONG HAO,李祎.A 2.22 Mb/s True Random Number Generator Based on a GeTe x Ovonic Threshold Switching Memristor.[J].IEEE Electron Device Letters,4500,(5):853-856
- [6] WANG LUN,缪向水,赵锐哲,温晋宇,陈江西,zhangzhuoran,刘梓轩.TONG HAO.Refresh Operation Method for Solving Thermal Stability Issue and Improving Endurance of Ovonic Threshold Switching Selector.[J].Journal of Materials Chemistry C,4500,(16):5411-5421
- [7] 赵锐哲,缪向水.TONG HAO.Trade‐Off between Multilevel Characteristics and Power Consumption of High‐Aspect‐Ratio Phase‐Change Memory.[J].physica status solidi (RRL) – Rapid Research Letters,4495,(8):2200463
- [8] 余颖洁,赵锐哲,TONG HAO.李祎.In‐Memory Search for Highly Efficient Image Retrieval.[J].Advanced Intelligent Systems,4494,(3):2200268
- [9] 林俊,TONG HAO.徐明.Design of all-phase-change-memory spiking neural network enabled by Ge-Ga-Sb compound.[J].Science China Materials,4492,(4):1551-1558
- [10] WANG LUN,chenziqi,缪向水.CHENG WEI MING,TONG HAO.Controllable On-Resistance and Its Thermal-Induced Channel Expansive Model in Ovonic Threshold Switch Selector.[J].IEEE Transactions on Electron Devices,4489,(1):366-370