Indexed by: Journal paper

First Author: 赵锐哲

Correspondence Author: TONG HAO

Co-author: 缪向水

Journal: physica status solidi (RRL) – Rapid Research Letters

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 17

Issue: 8

Page Number: 2200463

Key Words: high aspect-ratio, multilevel cells, phase-change memory, powerconsumption

DOI number: 10.1002/pssr.202200463

Date of Publication: 4495-09-01

Abstract: Storage density improvement is a key challenge for phase-change memory (PCM)application for storage class memory (SCM). The high-aspect-ratio design inconfined-structure PCM enables controllable multilevel cell (MLC) operation.However, the increasing aspect-ratio will cause too large energy consumption tosuccessfully operate the PCM. The trade-off of different aspect-ratio sizes ofGe2Sb2Te5(GST) nanowires (NWs) is investigated. Through COMSOL simula-tion and experiments, with the same Reset energy, the limit of aspect-ratiodecreases with increasing NWs lengths. In the meantime, larger Reset energy isrequired with a larger length for the same aspect-ratio devices. Finally, the designrange of the high aspect-ratio is optimized in which the NWs length size is below1.5 um and the aspect-ratio ranges from 8:1 to 10:1. This work can provideguidance for the design of high-aspect-ratio 3D PCM with better MLC.RESEARCH ARTICLEwww.pss-rapid.comPhys. Status Solidi RRL2023,17, 22004632200463 (1 of 5)© 2023 Wiley-VCH GmbH

Links to published journals: https://onlinelibrary.wiley.com/doi/full/10.1002/pssr.202200463