Indexed by: Journal paper

First Author: 曾运韬

Correspondence Author: 程晓敏

Co-author: 缪向水,TONG HAO,徐明,朱云来,李翰

Journal: Advanced Electronic Materials

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 8

Issue: 10

Page Number: 2200437

Key Words: atomic migration confinements, embedded interfaces, high reliability, phase-change memory, spontaneously phase-separated, thermal confinements, ultralow power consumption

DOI number: 10.1002/aelm.202200437

Date of Publication: 4475-07-01

Abstract: Phase-change memory is one of the most promising candidates for the next generation nonvolatile memory, but their high power consumption and low reliability remain bottleneck problems that limit the data storage density and its storage-class memory application. Here, an innovative phase change material with embedded self-precipitated interfaces, where the nanoscale grains of phase change material are cut into interconnecting “crystal islands” by thermally stable self-precipitated material with low thermal conductivity, is proposed. The precipitated material provides both thermal and atomic migration confinements in three dimensions. The thermal confinement enables low power consumption, and the atomic migration confinement enables high device reliability. The devices based on spontaneously phase-separated O-doped Sb2Te3 verify the material design, where Sb oxide acts as the precipitated heterogeneous phase and Sb–Te alloy as the phase change material. O-doped Sb2Te3 device with 250 nm hole diameter shows an ultralow power consumption, down to a few hundreds of femtojoule, which is comparable with those of phase change nanowires. Besides, good thermal stability and low resistivity drift (drift coefficient 0.005) as well as excellent cycle endurance up to 108 times are also obtained at the same time. The doping fabrication process is quite compatible with current semiconductor industry.

Links to published journals: https://onlinelibrary.wiley.com/doi/10.1002/aelm.202200437