Indexed by: Journal paper

First Author: WANG LUN,chenziqi

Correspondence Author: CHENG WEI MING,TONG HAO

Co-author: 缪向水

Journal: IEEE Transactions on Electron Devices

Affiliation of Author(s): 江汉大学、华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 70

Issue: 1

Page Number: 366-370

Key Words: ON-resistance, ovonic threshold switch (OTS), real-time power, threshold switching mechanism

DOI number: 10.1109/TED.2022.3224702

Date of Publication: 4489-06-01

Abstract: Ovonic threshold switch (OTS) selector is a key enabler for developing high-density nonvolatile memory with crossbar arrays. In this work, we investigated the resistance characteristics of the OTS device at the ON state, which is pivotal in the integration of the OTS and the memory element. The results indicate that the ON-resistance is not a constant value in the OTS device and is uncorrelated with the device areas but dependent on the real-time power applied on the device that is at ON state. Then, we proposed a thermal-induced compact model to describe the ON-resistance in the OTS device, referring to the simulation of the expansive conductive channel in OTS. The proposed model matches well with the measured ON-resistances with different conditions in the study. Our results contribute to further understanding of the threshold switching mechanism and selecting appropriate operation conditions for the OTS selector integrated in the high-density memory array.

Links to published journals: https://ieeexplore.ieee.org/document/9764828