Indexed by: Journal paper

First Author: 林俊,麦贤良,徐明

Correspondence Author: 缪向水,周鹏,徐明

Co-author: 侯祥,TONG HAO,He Yuhui,李祎,张伟

Journal: Advanced Functional Materials

Affiliation of Author(s): 华中科技大学、复旦大学、西安交通大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 30

Issue: 50

Page Number: 2003419

Key Words: artificial neurons, artificial synapses, memory, neurocomputing, phase change materials

DOI number: 10.1002/adfm.202003419

Date of Publication: 4411-05-01

Abstract: Traditional von Neumann computing architecture with separated computa-tion and storage units has already impeded the data processing performance and energy efficiency, calling for emerging neuromorphic electronic and optical devices and systems which can mimic the human brain to shift this paradigm. Material-level innovation has become the key component to this revolution of information technology. Chalcogenide phase-change material (PCM) as a well-acknowledged data-storage medium is a promising candi-date to tackle this challenge. In this review, the use of PCMs to implement artificial neurons and synapses from both the electronic and optical respects is discussed, and in particular, the structure–property physics and transition dynamics that enable such brain-inspired and in-memory computing applica-tions are emphasized. Recent advances on the atomic-level amorphous and crystalline structures, transition mechanisms, materials optimization and design, neural and synaptic devices, brain-inspired chips, and computing systems, as well as the future opportunities of PCMs, are summarized and discussed.

Links to published journals: https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.202003419