Indexed by: Journal paper

First Author: 于振海,郭彦荣,徐萌

Correspondence Author: 徐明

Co-author: C.Z.Wang,陈超,王松友,何启明,缪向水,徐开朗,程晓敏,TONG HAO

Journal: Journal of Materials Chemistry C

Affiliation of Author(s): 华中科技大学，复旦大学，上海科技大学，美国爱荷华州立大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 7

Issue: 29

Page Number: 9025-9030

DOI number: 10.1039/C9TC02963J

Date of Publication: 4367-05-01

Abstract: Phase change memory is an emerging nonvolatile memory technology, recently becoming the center of attention to bridge the speed gap between fast dynamic random access memory and slow flash-based solid-state drives. Lately, CrGeTe3 has been investigated as a special phase change material with an inverse resistance and density change. This material has excellent properties such as good thermal stability, ultralow-energy glass formation process and almost zero mass-density change upon crystallization. Here, we analyzed the amorphous structure of this abnormal material in detail through ab initio simulations and discovered that the metallic-like tight atomic packing is the origin of the high carrier concentration and high mass density in the amorphous phase. Furthermore, the bonding analysis confirms that it is the short Cr-Cr bonds that lead to high packing efficiency in the amorphous local order. Our results discovered the material gene of the amorphous CrGeTe3, paving the way for the design of high-performance memory devices based on this material.

Links to published journals: https://www.researchgate.net/publication/334186878_Understanding_CrGeTe3_an_abnormal_phase_change_material_with_inverse_resistance_and_density_contrast