Indexed by: Journal paper

First Author: 吴倩倩

Correspondence Author: 缪向水,徐明

Co-author: 程晓敏,Wu,Liangcai,TONG HAO,倩航,徐萌,徐开朗

Journal: Advanced Electronic Materials

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 4

Issue: 9

Page Number: 1800127

DOI number: 10.1002/aelm.201870043

Date of Publication: 4325-01-01

Abstract: Phase-change memory (PCM) is a promising candidate for next-generation memory technology due to the fast switching and large property contrast between the crystalline and amorphous phases. However, the large difference of mass density between these two phases is one of the major factors that lead to the failure of PCM devices. In this work, it is discovered that the carbon alloying remarkably reduces the density change of GeSb film (GeSbC), a chalcogen-free material with high stability and good switching properties, from ≈6% to ≈3%. In particular, it is focused on the mechanism how carbon affects the structure of GeSbC alloys through X-ray photoelectron spectroscopy and ab initio calculations, demonstrating that this dopant has increased the packing efficiency by forming small tetrahedral clusters in the bonding region of the glass. The results have important implications on the design of durable phase-change memory materials.

Links to published journals: https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201800127