Indexed by: Journal paper

First Author: 林琪

Correspondence Author: 缪向水,TONG HAO

Co-author: 冯金龙,钱航,程曲,徐明,李祎

Journal: IEEE Electron Device Letters

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 39

Issue: 4

Page Number: 496-499

Key Words: Dual-layer selector, threshold switching, selectivity, on-current drive, ion supply layer

DOI number: 10.1109/LED.2018.2808465

Date of Publication: 4315-03-01

Abstract: We demonstrate a CuS/GeSe dual-layer selector with excellent performance. This CuS/GeSe dual-layer selector exhibits ultrahigh selectivity (1.25 × 109), high on-current drive (600 µA), ultralow off current (∼100 fA), and extremely steep switching slope (<1.4 mV/dec). This selector shows significant threshold switching behavior by introducing CuS as the ion supply layer to implant limited Cu ions into GeSe layer, to form unstable filaments at high voltage and retract Cu ions at low voltage. In addition, Cu/GeSe devices were fabricated as a comparison, showing desirable memory switching. These two devices are of great potential for cross-point memory applications.

Links to published journals: https://ieeexplore.ieee.org/abstract/document/8300519