Indexed by: Journal paper

First Author: 钱航

Correspondence Author: TONG HAO

Co-author: 缪向水,徐明,周凌珺,季宏凯,何明泽,TONG HAO

Journal: SCIENTIFIC REPORTS

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 8

DOI number: 10.1038/s41598-017-18964-w

Date of Publication: 4343-12-01

Abstract: The tunable disorder of vacancies upon annealing is an important character of crystalline phase-change material Ge2Sb2Te5 (GST). A variety of resistance states caused by dierent degrees of disorder can lead to the development of multilevel memory devices, which could bring a revolution to the memory industry by signicantly increasing the storage density and inspiring the neuromorphic computing. This work focuses on the study of disorder-induced carrier localization which could result in multiple resistance levels of crystalline GST. To analyze the eect of carrier localization on multiple resistant levels, the intrinsic eld eect (the change in surface conductance with an applied transverse electric eld) of crystalline GST was measured, in which GST lms were annealed at dierent temperatures. The eld eect measurement is an important complement to conventional transport measurement techniques. The eld eect mobility was acquired and showed temperature activation, a hallmark of carrier localization. Based on the relationship between eld eect mobility and annealing temperature, we demonstrate that the annealing shifts the mobility edge towards the valence-band edge, delocalizing more carriers. The insight of carrier transport in multilevel crystalline states is of fundamental relevance for the development of multilevel phase change data storage.

Links to published journals: https://www.nature.com/articles/s41598-017-18964-w