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Manipulation of dangling bonds of interfacial states coupled in GeTe-rich GeTe/Sb2Te3 superlattices
Release time:2023-08-21  Hits:

Indexed by: Journal paper

First Author: yangzhe

Correspondence Author: TONG HAO

Co-author: 缪向水,程晓敏,徐明

Journal: SCIENTIFIC REPORTS

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 7

DOI number: 10.1038/s41598-017-17671-w

Date of Publication: 4307-12-01

Abstract: Superlattices consisting of stacked nano-sized GeTe and Sb2Te3 blocks have attracted considerable attention owing to their potential for an ecient non-melting switching mechanism, associated with complex bonding between blocks. Here, we propose possible atomic models for the superlattices, characterized by dierent interfacial bonding types. Based on interplanar distances extracted from ab initio calculations and electron diraction measurements, we reveal possible intercalation of dangling bonds as the GeTe content in the superlattice increases. The dangling bonds were further conrmed by X-ray photoelectron spectroscopy, anisotropic temperature dependent resistivity measurements down to 2 K and magnetotransport analysis. Changes of partially coherent decoupled topological surfaces states upon dangling bonds varying contributed to the switching mechanism. Furthermore, the topological surface states controlled by changing the bonding between stacking blocks may be optimized for multi-functional applications

Links to published journals: https://www.nature.com/articles/s41598-017-17671-w