Indexed by: Journal paper

First Author: 钱航

Correspondence Author: TONG HAO

Co-author: 缪向水,程晓敏,Xue Kanhao,季宏凯,颜柏寒,周凌珺,TONG HAO

Journal: Journal of Physics D Applied Physics

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 49

Issue: 49

Page Number: 495302

Key Words: phase change memory；work function；superlattice-like

DOI number: 10.1088/0022-3727/49/49/495302

Date of Publication: 4271-08-01

Abstract: We utilized a GeTe/Sb2Te3 superlattice-like structure (SLL) to obtain a lower crystalline work function (WF) than that for GeTe. Electrostatic force microscopy measurements demonstrated the difference in crystalline WF. Due to the lower crystalline WF, the heterojunction diodes based on the SLL obtained a better crystalline electrical performance. We preformed numerical simulation to confirm that the higher number of Te dangling bonds caused by the multilayer interface and grain boundaries in the SLL is the main reason for the decrease in WF. X-ray photoelectron spectroscopy analysis indicated that more Te-O bonds formed in SLL than GeTe after atmospheric annealing. While it is easy for the Te dangling bonds to combine dipoles, more Te dangling bonds exist in SLLs.

Links to published journals: https://iopscience.iop.org/article/10.1088/0022-3727/49/49/495302