Indexed by: Journal paper

First Author: 余念念

Correspondence Author: 缪向水

Co-author: 缪向水,TONG HAO

Journal: Applied Physics Letters

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Key Words: Ab-initio molecular dynamics, Phonons, Crystalline solids, Amorphous materials, Polycrystalline material, Raman scattering, Raman spectroscopy, Thin films, Transmission electron microscopy, Phase change memories

DOI number: 10.1063/1.4894864

Date of Publication: 4187-07-01

Abstract: We report the drastic effect of film thickness on the structure and corresponding phonon behavior of crystalline GeTe ultrathin film. GeTe film with film thickness at 5 nm still shows good crystallization behavior and this highly scaled dimension confined almost all the crystallites to have preferred [111] orientation. The large specific interface area in ultrathin film give rise to the increase of tetrahedral coordinated Ge atoms and a rising Raman mode at low frequency is observed. These findings give implications for the thermal and electrical characters of phase change ultrathin films and thus for relevant scaling properties of Phase Change Memory.

Links to published journals: https://pubs.aip.org/aip/apl/article/105/12/121902/1020200/Structure-and-phonon-behavior-of-crystalline-GeTe