Indexed by: Journal paper

First Author: Long.X.M

Correspondence Author: 缪向水

Co-author: Liu.C,Huang.J.D,Yang.D.H,李祎,TONG HAO,程晓敏,Sun.J.J

Journal: Solid-State Electronics

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 67

Issue: 1

Page Number: 1-5

Key Words: Phase change memory Critical dimension Sidewall angle Thermo-electric simulation

DOI number: 10.1016/j.sse.2011.07.001

Date of Publication: 4077-08-01

Abstract: In this paper, the volume-minimized model of phase change memory (PCM) cell with Ge2Sb2Te5 (GST) material has been established to study the dynamic switching (set-to-reset) characteristic dependence on the sidewall angle. Joule heating volume, threshold current, dynamic resistance and phase transition rate of PCM cells by current pulse are all calculated. The results show that the threshold current increases with decreasing the sidewall angle and is significantly impacted by the feature size and aspect ratio. The PCM cell of 90 sidewall angle exhibits the smallest Joule heating volume, the highest RESET resistance and the fastest phase transition property.

Links to published journals: https://www.sciencedirect.com/science/article/pii/S0038110111002577