论文类型：期刊论文
第一作者：朱荣江
通讯作者：童浩
合写作者：缪向水,高科,赵锐哲
发表刊物：IEEE Electron Device Letters
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：Early Access
关键字：Atomic Layer Deposition，precursor pulses，high dynamic range
DOI码：10.1109/LED.2023.3296807
发表时间：4513-01-01
摘要：With the increase of memory cell density, the structure of phase change memory (PCM) has changed from two-dimensional to three-dimensional, the manufacturing process has become increasingly complex, and the cost of tape-out has risen sharply. In order to optimize device performance and improve yield, improving device reliability has become a primary focus of attention. A high dynamic range can significantly reduce the possibility of device failure or bit errors, thereby improving reliability. In this study, we utilized atomic layer deposition (ALD) to fabricate a crystalline GeSb 2 Te 4 film using special precursor pulses. By inducing crystallization through crystal nucleation, the film was able to switch stably between high and low resistance states during device operation without experiencing any intermediate states that may lead to device failure or bit errors. Moreover, the Rhombohedral phase film (~10 3 Ω) fabricated by ALD resulted in PCM cells with a higher dynamic range (~1000X) compared to physical vapor deposition (PVD) (~10X). The PCM cell’s endurance under a dynamic range of 1000X was able to reach 10 6 cycles, with a low drift coefficient (0.00066) for the low resistance state. This work offers a new approach to improving the reliability of PCM.
发布期刊链接：https://ieeexplore.ieee.org/abstract/document/10190604