论文类型：期刊论文
第一作者：曾运韬
通讯作者：程晓敏
合写作者：缪向水,童浩,徐明,朱云来,李翰
发表刊物：Advanced Electronic Materials
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：8
期号：10
页面范围：2200437
关键字：atomic migration confinements, embedded interfaces, high reliability, phase-change memory, spontaneously phase-separated, thermal confinements, ultralow power consumption
DOI码：10.1002/aelm.202200437
发表时间：4475-07-01
摘要：Phase-change memory is one of the most promising candidates for the next generation nonvolatile memory, but their high power consumption and low reliability remain bottleneck problems that limit the data storage density and its storage-class memory application. Here, an innovative phase change material with embedded self-precipitated interfaces, where the nanoscale grains of phase change material are cut into interconnecting “crystal islands” by thermally stable self-precipitated material with low thermal conductivity, is proposed. The precipitated material provides both thermal and atomic migration confinements in three dimensions. The thermal confinement enables low power consumption, and the atomic migration confinement enables high device reliability. The devices based on spontaneously phase-separated O-doped Sb2Te3 verify the material design, where Sb oxide acts as the precipitated heterogeneous phase and Sb–Te alloy as the phase change material. O-doped Sb2Te3 device with 250 nm hole diameter shows an ultralow power consumption, down to a few hundreds of femtojoule, which is comparable with those of phase change nanowires. Besides, good thermal stability and low resistivity drift (drift coefficient 0.005) as well as excellent cycle endurance up to 108 times are also obtained at the same time. The doping fabrication process is quite compatible with current semiconductor industry.
发布期刊链接：https://onlinelibrary.wiley.com/doi/10.1002/aelm.202200437