论文类型：期刊论文
第一作者：颜柏寒
通讯作者：童浩
合写作者：钱航,缪向水,童浩
发表刊物：Applied Physics Letters
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：107
期号：13
页面范围：133506
关键字：Energy levels, Electric currents, Electrical properties and parameters, Heterostructures, Current-voltage characteristic, Transistors, Amorphous materials, X-ray photoelectron spectroscopy, Chemical elements
DOI码：10.1063/1.4931126
发表时间：4230-05-01
摘要：Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-ray photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current. (C) 2015 AIP Publishing LLC.
发布期刊链接：https://pubs.aip.org/aip/apl/article/107/13/133506/28539/Threshold-voltage-modulated-phase-change