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Controllable synthesis and electronic structure characterization of multiple phases of iron telluride thin films

发布时间:2023-09-07  点击次数:
论文类型:期刊论文 第一作者:Zhimo Zhang 通讯作者:Wenhao Zhang,Ying-Shuang Fu 合写作者:Gang Xu,Zijin Ye,Lin Gu,Qinghua Zhang,Fanqi Meng,Rui Li,Min Cai 发表刊物:Physical Review Materials 收录刊物:SCI 学科门类:理学 一级学科:物理学 文献类型:J 卷号:4 期号:12 页面范围:125003 ISSN号:2475-9953 发表时间:2020-12-29 影响因子:3.989 摘要:We present an investigation on the controlled growth of epitaxial iron telluride films of multiple phases by molecular beam epitaxy. By optimizing the substrate temperature, we fabricate different phases of α-FeTe, β-FeTe, and FeTe2, respectively, whose crystalline morphologies are determined by means of in situ scanning tunneling microscopy/spectroscopy and ex situ scanning transmission electron microscopy. While both α- and β-FeTe films are metallic, we uncover a ∼185- and 65-mV semiconducting band gap for the (100) and (011) facets of FeTe2 film, respectively, with the former one being compatible with the first principles calculations. Moreover, for FeTe2, we observe reduced gaps with enhanced conductance in the vicinity of edge boundaries, which are dependent on the geometries of step orientation and possibly in correlation to the magnetic anisotropy with structural distortion. Our study provides insight into the controllable synthesis of Fe-Te compounds with variation of stoichiometries and surface terminations, which may generalize to other epitaxial Fe chalcogenide films.