论文类型：期刊论文
第一作者：Hongtao Yuan
通讯作者：Yulin Chen,Yi Cui,Harold Y Hwang
合写作者：Zahid Hussain,Xiaodong Xu,Yingsheng Huang,Shoucheng Zhang,Zhixun Shen,Alexei Barinov,Mikhail Yablonskikh,Victor Kandyba,Pavel Dudin,Sung-Kwan Mo,Yi Zhang,Kai Yan,Dumitru Dumcenco,Sanfeng Wu,Bo Zhou,Gang Xu,Zhongkai Liu
发表刊物：Nano Letters
收录刊物：SCI
学科门类：理学
一级学科：物理学
文献类型：J
卷号：16
期号：8
页面范围：4738-4745
ISSN号：1530-6984
发表时间：2016-08-10
影响因子：12.712
摘要：Layered transition metal chalcogenides with large spin orbit coupling have recently sparked much interest due to their potential applications for electronic, optoelectronic, spintronics, and valleytronics. However, most current understanding of the electronic structure near band valleys in momentum space is based on either theoretical investigations or optical measurements, leaving the detailed band structure elusive. For example, the exact position of the conduction band valley of bulk MoS2 remains controversial. Here, using angle-resolved photoemission spectroscopy with submicron spatial resolution (micro-ARPES), we systematically imaged the conduction/valence band structure evolution across representative chalcogenides MoS2, WS2, and WSe2, as well as the thickness dependent electronic structure from bulk to the monolayer limit. These results establish a solid basis to understand the underlying valley physics of these materials, and also provide a link between chalcogenide electronic band structure and their physical properties for potential valleytronics applications.
发布期刊链接：https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b05107