论文类型：期刊论文
第一作者：徐刚
合写作者：Gang Xu, Jing Wang, Claudia Felser, Xiao-Liang Qi, Shou-Cheng Zhang
发表刊物：Nano letters
收录刊物：SCI
学科门类：理学
一级学科：物理学
文献类型：J
卷号：15
期号：3
页面范围：2019-2023
发表时间：2015-02-03
摘要：On the basis of ab initio calculations, we predict that a monolayer of Cr-doped (Bi,Sb)2Te3 and GdI2 heterostructure is a quantum anomalous Hall insulator with a nontrivial band gap up to 38 meV. The principle behind our prediction is that the band inversion between two topologically trivial ferromagnetic insulators can result in a nonzero Chern number, which offers a better way to realize the quantum anomalous Hall state without random magnetic doping. In addition, a simple effective model is presented to describe the basic mechanism of spin polarized band inversion in this system.