论文类型：期刊论文
第一作者：Yong Xu,徐勇
通讯作者：张首晟,Shou-Cheng Zhang
合写作者： Binghai Yan, Hai-Jun Zhang, Jing Wang, Gang Xu, Peizhe Tang, Wenhui Duan
发表刊物：Physical review letters
收录刊物：SCI
学科门类：物理学
文献类型：J
卷号：111
期号：13
页面范围：136804
发表时间：2013-09-24
摘要：The search for large-gap quantum spin Hall (QSH) insulators and effective approaches to tune QSH states is important for both fundamental and practical interests. Based on first-principles calculations we find two-dimensional tin films are QSH insulators with sizable bulk gaps of 0.3 eV, sufficiently large for practical applications at room temperature. These QSH states can be effectively tuned by chemical functionalization and by external strain. The mechanism for the QSH effect in this system is band inversion at the Γ point, similar to the case of a HgTe quantum well.