论文类型：期刊论文
第一作者：袁洪涛
合写作者：Hongtao Yuan, Xiaoge Liu, Farzaneh Afshinmanesh, Wei Li, Gang Xu, Jie Sun, Biao Lian, Alberto G Curto, Guojun Ye, Yasuyuki Hikita, Zhixun Shen, Shou-Cheng Zhang, Xianhui Chen, Mark Brongersma, Harold Y Hwang, Yi Cui
发表刊物：Nature nanotechnology
收录刊物：SCI
学科门类：理学
一级学科：物理学
文献类型：J
卷号：10
期号：8
页面范围：707
发表时间：2015-08-22
摘要：The ability to detect light over a broad spectral range is central to practical optoelectronic applications and has been successfully demonstrated with photodetectors of two-dimensional layered crystals such as graphene and MoS 2. However, polarization sensitivity within such a photodetector remains elusive.Here, we demonstrate a broadband photodetector using a layered black phosphorus transistor that is polarization-sensitive over a bandwidth from∼ 400 nm to 3,750 nm. .