论文类型：期刊论文
第一作者：袁洪涛
合写作者：Hongtao Yuan, Xinqiang Wang, Biao Lian, Haijun Zhang, Xianfa Fang, Bo Shen, Gang Xu, Yong Xu, Shou-Cheng Zhang, Harold Y Hwang, Yi Cui
发表刊物：Nature nanotechnology
收录刊物：SCI
学科门类：理学
一级学科：物理学
文献类型：J
卷号：9
期号：10
页面范围：851
发表时间：2014-10-27
摘要：The valley degree of freedom in layered transition-metal dichalcogenides provides an opportunity to extend the functionalities of spintronics and valleytronics devices. The achievement of spin-coupled valley polarization induced by the non-equilibrium charge-carrier imbalance between two degenerate and inequivalent valleys has been demonstrated theoretically and by optical experiments. However, the generation of a valley and spin current with the valley polarization in transition-metal dichalcogenides remains elusive.