(3) Li, S.; Zhang, H.; Ruan, H.; Cheng, Z.; Yao, Y.; Zhuge, F.; Zhai, T. Programmable Nucleation and Growth of Ultrathin Tellurium Nanowires via a Pulsed Physical Vapor Deposition Design. Adv. Funct. Mater. 2023, 33 (11), 2211527.
Release time:2024-11-07Hits:
Pre One:(2) Wang, H.; Lu, Y.; Liu, S.; Yu, J.; Hu, M.; Li, S.; Yang, R.; Watanabe, K.; Taniguchi, T.; Ma, Y.; Miao, X.; Zhuge, F.; He, Y.; Zhai, T. Adaptive Neural Activation and Neuromorphic Processing via Drain‐Injection Threshold‐Switching Float Gate Transistor Memory. Adv. Mater. 2023, 35 (52), e2309099.
