Indium-Tin-Oxide Thin-Film Transistors with High Field-Effect Mobility (129.5 cm2/V⋅s) and Low Thermal Budget (150 °C)
Release time:2024-11-27
Hits:
- Indexed by:
- Journal paper
- First Author:
- Han Kaizhen et. al.
- Journal:
- IEEE Electron Device Letters
- Volume:
- 44
- Issue:
- 12
- Page Number:
- 1999 - 2002
- Date of Publication:
- 2023-11-02
- Pre One:A Novel Universal Model for Extracting Specific Contact Resistivity Featuring High Resolution, Strong Variation Immunity, and Simple Fabrication Process
- Next One:A Novel Bridge Transmission Line Method for Thin-Film Semiconductors: Modelling, Simulation Verification, and Experimental Demonstration