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韩恺桢HAN KAI ZHEN
Other
- Professional Title:Other
- Gender:Male
- Status:Employed
- Department:IC College
- Education Level:Postgraduate (Doctoral)
- Degree:Doctoral Degree in Philosophy
- Han Kaizhen et. al.,High Performance Indium–Tin–Oxide Schottky Diodes for Terahertz Band Operation.Nano Letters,2024,(26):7919-7926
- Han Kaizhen et. al.,A Specific Contact Resistivity Extraction Scheme With Strong Variation Immunity Customized for Thin-Film Semiconductors: Bridge Transmission Line Method.IEEE Transactions on Electron Devices,2024,(4):2766 - 2773
- Han Kaizhen et. al.,A Novel Universal Model for Extracting Specific Contact Resistivity Featuring High Resolution, Strong Variation Immunity, and Simple Fabrication Process.IEEE International Electron Devices Meeting,2023,30.3.1 - 30.3.4
- Han Kaizhen et. al.,Indium-Tin-Oxide Thin-Film Transistors with High Field-Effect Mobility (129.5 cm2/V⋅s) and Low Thermal Budget (150 °C).IEEE Electron Device Letters,2023,(12):1999 - 2002
- Han Kaizhen et. al.,A Novel Bridge Transmission Line Method for Thin-Film Semiconductors: Modelling, Simulation Verification, and Experimental Demonstration.IEEE Symposium on VLSI Technology,2023,T2.1.1 - T2.1.2
- Han Kaizhen et. al.,ITO Schottky Diode with Record fT Beyond 400 GHz: Exploring Thickness Dependent Film Property and Novel Heterogeneous Design.IEEE International Electron Devices Meeting,2022,22.7.1 - 22.7.4
