First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 µA/µm
Release time:2024-11-25
Hits:
- Indexed by:
- 会议论文
- First Author:
- Han Kaizhen et. al.
- Journal:
- IEEE Symposium on VLSI Technology
- Page Number:
- T10.1.1 - T10.1.2
- Date of Publication:
- 2021-08-11