Hybrid Design Using Metal–Oxide–Semiconductor Field-Effect Transistors and Negative-Capacitance Field-Effect Transistors for Analog Circuit Applications
Release time:2024-11-17
Hits:
- Indexed by:
- Journal paper
- First Author:
- Han Kaizhen et. al.
- Journal:
- IEEE Transactions on Electron Devices
- Volume:
- 68
- Issue:
- 2
- Page Number:
- 846 - 852
- Date of Publication:
- 2020-12-18
- Pre One:First Demonstration of Oxide Semiconductor Nanowire Transistors: a Novel Digital Etch Technique, IGZO Channel, Nanowire Width Down to ~20 nm, and Ion Exceeding 1300 µA/µm
- Next One:High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling