Release time:2021-07-08 Hits:
- Indexed by:Journal paper
- First Author:WU WENJIE
- Correspondence Author:tuliangcheng
- Co-author:Zhu Tao,LIU JIN QUAN,FAN JI
- Journal:Journal of Electronic Materials
- Included Journals:SCI、SSCI
- Discipline:Engineering
- First-Level Discipline:Material Science and Engineering
- Document Type:J
- Volume:44
- Issue:3
- Key Words:Removal of post-etch residues, ICP DRIE, CMOS-compatible,
polyimide
- DOI number:10.1007/s11664-014-3604-5
- Date of Publication:2014-12-15
- Abstract:A method for removal of passivation polymer residues from deep reactive ionetching (DRIE) has been systematically investigated in this study. The method combines dry oxygen plasma ashing and conventional photoresist wet stripping. Samples were carefully examined by x-ray photoelectron spectroscopy (XPS), energy-dispersive x-ray spectroscopy (EDX), and study of surface morphology. XPS and EDX analysis showed that the polymer residues consisted mainly of C-O, CFx (x = 1, 2, 3), and C-CF bonds. Optimized oxygen plasma ashing effectively removes most of the fluorocarbon content, except some nano-residues. Subsequent conventional wet stripping in organic solvents
could eliminate these stubborn nanoparticles while dissolving the
underlying photoresist. Excellent removal is apparent from scanning electron microscopy images. The fluorine content determined by EDX analysis showed that the residues were completely removed. The metal layers, oxide insulator
layers, and the polyimide insulators function well after this critical surface treatment. The excellent results show this is an outstanding method for removal of DRIE passivation polymer residues for MEMS fabrication.
