何强
个人信息
Personal information
副教授 硕士生导师
性别：男
在职信息：在职
所在单位：集成电路学院
学历：研究生(博士)毕业
学位：工学博士学位
毕业院校：华中科技大学
学科：微电子学与固体电子学曾获荣誉：
2023 校优秀班主任
2022 "火花奖"
2019 华为公司总裁个人
2020 华为公司金牌团队奖
2020 华为武汉研究所-优秀班排长
2014 硕士国家奖学金
2020 华为武汉研究所年度所长奖-优秀技术合作奖
论文类型：期刊论文
发表刊物：J. Electron. Mater.
收录刊物：SCI
学科门类：工学
一级学科：电子科学与技术
文献类型：J
关键字：iPCM; Bi; Te; /GeTe; lower power consumption; Ge atom flip
DOI码：10.1007/S11664-022-09888-X
摘要：In order to further reduce the energy required for SET/RESET operations of interfacial phase change memory, Bi2Te3/GeTe, a novel chalcogenide superlattice interfacial phase change material (iPCM), was proposed by introducing greater stress at the superlattice interface. Based on the Ge-atom flip-flop model, ab initio simulation was employed to design and optimize the Ge atom movement path at the interface. Compared with the conventional Sb2Te3/GeTe iPCM, Bi2Te3/GeTe iPCM needs to overcome a lower energy barrier to complete the phase change process, presenting a lower SET/RESET power consumption advantage for interfacial phase change memory applications.