论文类型：期刊论文
发表刊物：J. Electron. Mater.
收录刊物：SCI
学科门类：工学
一级学科：电子科学与技术
文献类型：J
关键字：iPCM; Bi; Te; /GeTe; lower power consumption; Ge atom flip
DOI码：10.1007/S11664-022-09888-X
摘要：In order to further reduce the energy required for SET/RESET operations of interfacial phase change memory, Bi2Te3/GeTe, a novel chalcogenide superlattice interfacial phase change material (iPCM), was proposed by introducing greater stress at the superlattice interface. Based on the Ge-atom flip-flop model, ab initio simulation was employed to design and optimize the Ge atom movement path at the interface. Compared with the conventional Sb2Te3/GeTe iPCM, Bi2Te3/GeTe iPCM needs to overcome a lower energy barrier to complete the phase change process, presenting a lower SET/RESET power consumption advantage for interfacial phase change memory applications.