发表刊物：Nanoscale
收录刊物：SCI
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
DOI码：10.1039/D2NR02306G
摘要：Interconversion between charge and spin through spin-orbit coupling at a heavy metal (HM)/ferromagnet (FM) interface plays a key role in determining the amplitude of spin Hall magnetoresistance (SMR), which might maximally facilitate its applications in novel electronics. In this study, annealed NiFe films grown on MgO (100) substrates capped with Pt and Ta are reported to exhibit a maximum SMR. When the measuring temperature is reduced, the SMR rises and is significantly larger in crystalline NiFe than in amorphous NiFe. Another physical process for the negative SMR in Ta(dTa)/Pt(3 nm)/annealed NiFe samples is attributed to the interfacial spin-orbit coupling (ISOC) driven spin current (Js) generation and its reciprocal effects. Moreover, spin accumulation is enhanced at Pt(3 nm)/annealed NiFe interfaces after capping with a Ta layer, which functions as a spin sink in a certain thinner thickness range. With the cooperative interaction of choosing the proper Ta's thickness and annealing NiFe layers, the maximum SMR is obtained. Our results pave the way for rational interface engineering to enhance SMR for developing high-efficiency spintronic devices.