Indexed by: Journal paper

First Author: WANG LUN,chenziqi

Correspondence Author: TONG HAO

Co-author: 缪向水,温晋宇

Journal: IEEE Transactions on Electron Devices

Affiliation of Author(s): 江汉大学、华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Page Number: 2103478

Key Words: Device area, ovonic threshold switch (OTS), pulse falling edge, pulse sequence, threshold voltage.

DOI number: 10.1109/TED.2022.3169118

Date of Publication: 4471-08-01

Abstract: —In this work, we studied the threshold voltage V th for an ovonic threshold switch (OTS) device in a high-frequency continuous operation. By applying a pulse sequence with small pulse intervals, the dependence of V th on the falling edge of the prior pulse has been investigated in the Te-based OTS device. The results indicate that the V th presents a Weibull distribution in the pulse sequence, and the V th distribution drifts nonmonotonically with the pulse falling edge. Meanwhile, the drift tendency of the V th distribution was found depending on the device area. Furthermore, the recovery process and the time-resolved current profiles in the device operation have been investigated to further study the V th drift. The results indicate that the V th drift in continuous device operation is controllable and results from a combination of the effects of heat accumulation and the recovery process. The V th drift at high-frequency operating can be reduced by optimizing the device lateral dimension according to the mapping results of the V th. Our results can guide the design and operation of the OTS device with a low V th drift requirement

Links to published journals: https://ieeexplore.ieee.org/document/9764828