Indexed by: Journal paper

First Author: 赵锐哲,杨岭

Correspondence Author: TONG HAO,李祎

Co-author: 缪向水,余颖洁

Journal: IEEE Electron Device Letters

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 43

Issue: 7

Page Number: 1053-1056

DOI number: 10.1109/LED.2022.3179736

Date of Publication: 4471-01-01

Abstract: Here, we proposed an in-memory search prototype based on phase change memory (PCM). First, using the PCM, a highly compact (8F2) and low-energy (0.3 fJ/bit/search) nonvolatile ternary addressable memory (TCAM) is demonstrated and achieved a 6.6× energy saving and 50× cell area saving over the 16T SRAM-TCAM. Thanks to the non-volatility and massive parallelism of the PCM TCAM to computing Hamming distance, the frequent memory access is alleviated, enabling search operation in situ. The prototype shows a high throughput of 256 GB/s in data deduplication application, obtaining more than 250× energy saving and 42× improvement in throughput over CPU. Our study provides a low-area-overhead, low-energy, and high-throughput solution for the storage system to perform search in situ.

Links to published journals: https://ieeexplore.ieee.org/document/9786732