Indexed by: Journal paper

First Author: CAI WANG,WANG LUN

Correspondence Author: TONG HAO

Co-author: 万代兴,何达,缪向水,林琪

Journal: IEEE Electron Device Letters

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 42

Issue: 5

Page Number: 688-691

Key Words: Ovonic threshold switching (OTS), selector, 1S1R, high-density memory array.

DOI number: 10.1109/LED.2021.3064857

Date of Publication: 4426-04-01

Abstract: In this letter, we fabricated a C-doped GeTe x Ovonic threshold switching (OTS) selector in a via-hole structure. The material composition is simple without toxic element doping. Performance of the GeTe x -based selector is improved to be comparable to commercial GeSe-based selectors through C doping. A selector with advantages of low off-current (2 nA), low threshold voltage (1.26 V) accompanying with a big voltage window (0.55 V), high selectivity ( > 4.2×10 4 ), satisfactory endurance (> 10 7 cycles with 2 mA on-current), low cycle-to-cycle V th variation and fast operating speed (8.5 ns) was fabricated. Besides, selector with self-limited on-current character was found. Next, reasons behind off-current reduction and consistency improvement by using C doping were studied by First-principles calculations.

Links to published journals: https://ieeexplore.ieee.org/abstract/document/9373425