Indexed by: Journal paper

First Author: 何明泽

Correspondence Author: 缪向水,TONG HAO

Co-author: 徐明,程晓敏,万代兴,林琪,钱航,何达,何明泽

Journal: IEEE Electron Device Letters

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 40

Issue: 10

Key Words: Phase Change Memory (PCM), Ge2Sb2Te5 (GST), Multilevel Cell (MLC), low RESET current density, disorder, pre-operation, storage density, 3D cross-point.

DOI number: 10.1109/led.2019.2935890

Date of Publication: 4373-09-01

Abstract: We have fabricated a pillar structure phase change memory (PCM) with the prototypical phase change material Ge2Sb2Te5. Using a Low Current SET (LCS) pre-operation, the devices can operate with an ultralow RESET current density and have multilevel cell (MLC) capability, and these features both contribute to high storage density. Specifically, the RESET current density is only 4.84 MA/cm2, which is lowest among all the CMOS compatible PCM devices, and this ultra-low RESET current density enables the possibility to link with a two-terminal selector for 3D cross-point application. Meanwhile LCS makes MLC operation of our PCM more stable with a low operating current. In summary, this LCS pre-operation can greatly increase the storage density both by enabling integration with selectors for 3D cross-point and by stabilizing MLC operation when maintaining the feature size of PCM devices.

Links to published journals: https://ieeexplore.ieee.org/document/8805146