Indexed by: Journal paper

First Author: 杨冬冬

Correspondence Author: 缪向水

Co-author: 周凌珺,TONG HAO

Journal: Chinese Physics Letters

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 34

Issue: 12

Page Number: 1273011-5

DOI number: 10.1088/0256-307X/34/12/127301

Date of Publication: 4293-04-01

Abstract: Bi2Te3 thin films and GeTe/B2Te3 superlattices of different thicknesses are prepared on the silicon dioxide substrates by magnetron sputtering technique and thermally annealed at 573 K for 30 min. Thermoelectric (TE) measurements indicate that optimal thickness and thickness ratio improve the TE performance of Bi2Te3 thin films and GeTe/B2Te3 superlattices, respectively. High TE performances with figure-of-merit (ZT) values as high as 1.32 and 1.56 are achieved at 443 K for 30 nm and 50 nm Bi2Te3 thin films, respectively. These ZT values are higher than those of p-type Bi2Te3 alloys as reported. Relatively high ZT of the GeTe/B2Te3 superlattices at 300–380 K were 0.62–0.76. The achieved high ZT value may be attributed to the unique nano- and micro-structures of the films, which increase phonon scattering and reduce thermal conductivity. The results indicate that Bi2Te3-based thin films can serve as high-performance materials for applications in TE devices.

Links to published journals: https://iopscience.iop.org/article/10.1088/0256-307X/34/12/127301