Indexed by: Journal paper

First Author: TONG HAO

Correspondence Author: 缪向水

Co-author: 王开展,Q.,He,王校杰,周凌珺,J.,Y.,Liu,蓝峰

Journal: Journal of Physics D: Applied Physics

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 50

Issue: 35

Page Number: 5102

Key Words: GeTe/Bi2Te3 superlattices, temperature dependence, partially coherent regime,thermal conductivity

DOI number: 10.1088/1361-6463/aa7c94

Date of Publication: 4295-07-01

Abstract: Temperature-dependent thermal conductivity of phase-change material, GeTe/Bi2Te3 superlattices, has been investigated in the temperature range of 40–300 K. We have found that thermal conductivity increases with increasing temperature, which is contrary to the common results indicated by other works. In this paper, two possible mechanisms are suggested for this result. One is that the thermal conductivity is affected by the thermal boundary resistance at the interfaces between layers, and the other considers the factor of electronic thermal conductivity in the partially coherent regime which is based on the very wave-particle duality of phonons. Finally, the periodic thickness dependence of the thermal conductivity in GeTe/Bi2Te3 superlattices have been measured at room temperature, and the results indicate the main contribution of electron in the total thermal conductivity and the partially coherent regime of phonon. Thus we believe that the second explanation is more reasonable. The work here deepens the understanding of basic mechanisms of thermal transport in phase-change superlattices, and is instructive in modeling and simulation of phase change memories.

Links to published journals: http://doi.org/10.1088/1361-6463/aa7c94