Indexed by: Journal paper

First Author: 童非

Correspondence Author: 程晓敏

Co-author: Liu,J.D.

Journal: Thin Solid Films

Affiliation of Author(s): 华中科技大学，Hong Kong Polytechnic University

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Key Words: Pulsed laser deposition Chalcogenide Lattice strain Transmission electron microscopy

DOI number: 10.1016/j.tsf.2014.08.006

Date of Publication: 4160-05-01

Abstract: We report that the lattice strain induced phase selection and epitaxial relaxation in crystalline GeTe thin films by pulsed laser deposition. The single-crystal substrates ofMgO and BaF2 are designed to match the lattice of lowtemperature α-GeTe phase and high-temperature β-GeTe phase, respectively. The structures of deposited GeTe films show lattice-match dependence rather than temperature dependence. Raman analysis indicates that the α-GeTe to β-GeTe ferroelectric phase transition accompanies an increase of local six-coordinated Ge atoms, which is analogous to the phase transition from amorphous to crystalline for memory application.

Links to published journals: https://www.sciencedirect.com/science/article/pii/S0040609014008025