Indexed by: Journal paper

First Author: 余念念

Correspondence Author: 缪向水

Co-author: 缪向水,Elbashir,A.,Zhou,J.,TONG HAO

Journal: Applied Physics Letters

Affiliation of Author(s): 华中科技大学，Alneelain University

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

DOI number: 10.1063/1.4818132

Date of Publication: 4147-12-01

Abstract: We demonstrate the drastic effect of film thickness on the local order of Ge sites in amorphous GeTe ultrathin films by Surface Enhanced Raman Scattering study. The relative intensity of the two prominent peaks around 125cm1 and 160 cm1 changes greatly as a function of the film thickness from 100nm to 3 nm. We suggest that this change originates from the variation of the fraction of Ge atoms in tetrahedral- and defective octahedral-like sites. Ab initio Molecular Dynamics simulations show that more Ge atoms in ultrathin films are tetrahedrally coordinated. The result is consistent with the experimental observation of Raman spectroscopy

Links to published journals: https://pubs.aip.org/aip/apl/article/103/6/061910/237022/Local-order-of-Ge-atoms-in-amorphous-GeTe