Indexed by: Journal paper

First Author: TONG HAO

Correspondence Author: 缪向水

Co-author: 程晓敏,yangzhe

Journal: Applied Physics Letters

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 99

Issue: 21

Page Number: 212105

DOI number: 10.1063/1.3664132

Date of Publication: 4086-12-01

Abstract: Unlike its two components, the temperature coefficient of resistivity (TCR) of GeTe/Sb2Te3 multilayer (ML) increases from negative to positive on annealing, indicating an insulator-metal transition (IMT). Impedance spectroscopy measurements demonstrate that the grain boundary resistance (negative TCR) determines the total resistance of initial ML. As grain grows, which is confirmed by x-ray diffraction, scanning electron microscope, and optical reflectivity measurements, the contribution of grain resistance (positive TCR) increases gradually to the leading part and finally accomplishes the IMT in a sufficiently crystallized film. Furthermore, the artificially introduced interfaces form additional potential barrier in ML and also modulate its IMT behavior

Links to published journals: https://pubs.aip.org/aip/apl/article-abstract/99/21/212105/150963/Insulator-metal-transition-in-GeTe-Sb2Te3?redirectedFrom=fulltext