Indexed by: Journal paper

First Author: Long,Pengyu

Correspondence Author: 缪向水

Co-author: TONG HAO

Journal: Applied Physics Express

Affiliation of Author(s): 华中科技大学

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 5

Issue: 3

Page Number: 031201

DOI number: 10.1143/APEX.5.031201

Date of Publication: 4097-06-01

Abstract: Based on the Parlinsk–Li–Kawasoe method and density function theory, the phonon properties of some phase change memory materials are calculated. Thermal conductivities are acquired from our calculation, and they are in reasonable agreement with our experimental measurements. Phonon dispersion curve, mismatch between phonon density of states (DOS), partial density of states (PDOS) at interfaces, and thermal conductivities are studied. The results show that the low phonon group velocity and the thermal resistance at interfaces result in the low thermal conductivity of the GeTe/Sb2Te3 superlattice-like material, making it the best choice for phase change memory

Links to published journals: https://www.researchgate.net/publication/258591797_Phonon_Properties_and_Low_Thermal_Conductivity_of_Phase_Change_Material_with_Superlattice-Like_Structure