论文类型：期刊论文
第一作者：杨哲
通讯作者：童浩
合写作者：缪向水,童浩,徐明,何强,龚传涛,蔡经纬,张大友
发表刊物：Applied Physics Letters
所属单位：华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：121
期号：20
页面范围：203508
关键字：Phase transitions, Electrical properties and parameters, Energy efficiency, Joule heating, Crystallography, Raman spectroscopy, Resistive switching, Transmission electron microscopy, Chemical processes, Phase change memories
DOI码：10.1063/5.0127160
发表时间：4487-12-01
摘要：Phase change memory (PCM) is considered as a leading candidate for next generation data storage as well as emerging computing device, but the advancement has been hampered by high switching energy due to the melting process and amorphous relaxation induced large resistance drift. Polymorphic crystal-crystal transition without amorphization in metal dichalcogenides (TMDs) could be employed to solve these issues. Yet, the mechanism is still controversy. A melting-free PCM made of two dimensional (2D) MoTe2, which exhibits unipolar resistive switching (RS) and multi-level states with substantially reduced resistance drift via joule heating, is reported in this work. The device is first prepared based on the temperature dependence of Raman spectrum and electrical transport investigations on MoTe2 films. Significantly improved device performances on energy efficiency, switching speed, and memory window are further achieved by electrode size scaling down, indicating the key role of localized heating. Then, device scale transmission electron microscopy images reveal that the resistive switching stems from the transition between semiconducting 2H phase and metallic 1T0 phase. An entropy induced Te vacancies model is proposed to explain the reversible phase change mechanism in the MoTe2 based device. This study paves the way for further development of PCM based on atomically thin 2D TMDs, aiming for high density storage-class memory and high-precision neuromorphic computing.
发布期刊链接：https://pubs.aip.org/aip/apl/article/121/20/203508/2834732