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教授 博士生导师
所在单位：集成电路学院
学历：研究生(博士)毕业
学位：博士学位
毕业院校：华中科技大学
学科：微电子学与固体电子学曾获荣誉：
2024 华中科技大学青年五四奖章
2022 华为奥林帕斯先锋奖
2020 湖北省技术发明一等奖（排名第2）
2013 湖北省年度“十大科技事件”
2013 湖北省优秀博士学位论文
2014 湖北省优秀学士学位论文指导教师
2015 华中科技大学教师教学竞赛二等奖
2017 华中科技大学光学与电子信息学院“我最喜爱的教师班主任“
2020 华中科技大学光学与电子信息学院突出贡献一等奖
论文类型：期刊论文
第一作者：王伦,陈子琪
通讯作者：程伟明,童浩
合写作者：缪向水
发表刊物：IEEE Transactions on Electron Devices
所属单位：江汉大学、华中科技大学
学科门类：工学
一级学科：电子科学与技术
文献类型：J
卷号：70
期号：1
页面范围：366-370
关键字：ON-resistance, ovonic threshold switch
(OTS), real-time power, threshold switching mechanism
DOI码：10.1109/TED.2022.3224702
发表时间：4489-06-01
摘要：Ovonic threshold switch (OTS) selector is a key enabler for developing high-density nonvolatile memory with crossbar arrays. In this work, we investigated the resistance characteristics of the OTS device at the ON state, which is pivotal in the integration of the OTS and the memory element. The results indicate that the ON-resistance is not a constant value in the OTS device and is uncorrelated with the device areas but dependent on the real-time power applied on the device that is at ON state. Then, we proposed a thermal-induced compact model to describe the ON-resistance in the OTS device, referring to the simulation of the expansive conductive channel in OTS. The proposed model matches well with the measured ON-resistances with different conditions in the study. Our results contribute to further understanding of the threshold switching mechanism and selecting appropriate operation conditions for the OTS selector integrated in the high-density memory array.
发布期刊链接：https://ieeexplore.ieee.org/document/9764828