Indexed by: Journal paper

First Author: Zichong Zhang

Correspondence Author: Xingsheng Wang

Co-author: Chengxu Wang,Yifan Yang,Xiangshui Miao

Journal: Applied Physics Letters

Included Journals: SCI、EI

Document Type: J

Volume: 122

Page Number: 152902

DOI number: 10.1063/5.0137776

Date of Publication: 2023-04-10

Impact Factor: 3.971

Abstract: This paper discusses a mechanism and method for polarization enhancement in fabricated Hf0.5Zr0.5O2 (HZO) capacitors. The proposed reawakening voltage operation method (RVOM) to HZO films at elevated temperatures increases the transient switching current and polarization. The change in conduction mechanisms for the HZO capacitor current after RVOM can be observed by fitting leakage current curves. The generation of oxygen vacancies (VO) by RVOM causes a rapid increase in the leakage current and a gradual degradation in the breakdown voltages of HZO capacitors. As a result, while an appropriate amount of VO generation improves the polarization, an excess will damage the reliability of HZO films. Furthermore, the augmentation of polarization does not disappear after the cooling process, which indicates that the VO as induced by RVOM does not attenuate as the temperature decreases. Our approach and the experimental results have generated ideas on how to improve the polarization of HZO films.

Links to published journals: https://doi.org/10.1063/5.0137776