Indexed by: Journal paper

First Author: Xiao-Di Huang

Correspondence Author: Yi Li

Co-author: Yi Li , Hao-Yang Li, Kan-Hao Xue , Xingsheng Wang ,Xiang-Shui Miao

Journal: IEEE Electron Device Letters

Included Journals: SCI、EI

Place of Publication: USA

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Document Type: J

Volume: 41

Issue: 4

Page Number: 549-552

Key Words: Memristor, resistive switching, bilayer structure, forming-free, thermal stability

Date of Publication: 2020-04-01

Abstract: Throughoxygenprofileengineering,we fabricated W/AlOx/Al2 O3 /Pt bilayer memristors with a 250-nm feature size. The AlOx fabricated by sputtering serves as an oxygen vacancy source, whereas the Al2 O3 deposited by atomic layer deposition acts as a dominant resistive switching (RS) layer. Our devices show forming-free RS behaviors with high speed (28 ns), uniform resistance distribution, large on/off ratio (∼103 @100K, ∼103 @298K, and∼80@400K), and good retention. Besides, temperature stability with record high endurance from cryogenic to high-temperature(108 @100K,1010 @298K,and107 @400K) is dem