华中科技大学主页平台管理系统 Xingsheng Wang--英文主页-- Drain Bias Effects on Statistical Variability and Reliability and Related Subthreshold Variability in 20-nm Bulk Planar MOSFETs

Xingsheng Wang

Current position: 英文主页 > Scientific Research > Paper Publications

Drain Bias Effects on Statistical Variability and Reliability and Related Subthreshold Variability in 20-nm Bulk Planar MOSFETs

Release time:2018-06-07 Hits:

Indexed by: Journal paper

First Author: Xingsheng Wang

Correspondence Author: Xingsheng Wang

Co-author: X. Wang, A. R. Brown, B. Cheng, S. Roy,A. Asenov

Journal: Solid-State Electronics

Included Journals: EI、SCI

Discipline: Engineering

First-Level Discipline: Electronic Science And Technology

Volume: 98

Page Number: 99–105

Date of Publication: 2014-08-01