Xingsheng Wang
·Patents
一种超晶格忆阻器功能层材料、忆阻器单元及其制备方法
Release time:2022-06-07 Hits:
Affilication of Author(s): Huazhong University of Science and Technology
Patent Applicant: Xingsheng Wang,Chengxu Wang,Xiangshui Miao
Type of Patent: Invent
Application Number: 201911350103.X
Authorization number: ZL201911350103.X
Number of Inventors: 3
Application Date: 2019-12-24
Authorization Date: 2022-06-07