Indexed by: Journal paper

Document Code: 4

First Author: Hua Zhang

Correspondence Author: Wei Chen,* Alex K-Y Jen*

Co-author: Huan Wang, Wei Chen

Journal: Advanced Materials

Included Journals: SCI

Discipline: Engineering

Document Type: J

Volume: 29

Page Number: 160498

Date of Publication: 2017-06-12

Abstract: The p‐type inorganic semiconductor CuGaO2 as a hole‐transporting layer (HTL) in perovskite solar cells (PSCs) provides higher carrier mobility, better‐energy level matching, and superior stability, as well as low‐temperature processing technique. Compared to organic HTL, a very competitive PCE of 18.51% with long‐term stability is achieved. This indicates that CuGaO2 is a promising HTL for efficient and stable PSCs.

Links to published journals: https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201604984