徐静平

·Research Projects

Current position: 英文主页 > Scientific Research > Research Projects
Dual Gate Few-Layer MoS2 Field-Effect Transistors with High Performance and Low Power Dissipation
Release time:2021-05-21  Hits:

Affiliation of Participant(s): Huazhong University of Science and Technology

Teaching and Research Group: School of Optical and Electronic Information

Status: In progress

Supported by: Ministry of Science and Technology of China

Type of Research Outcome: Thesis

Classification of Project: National Natural Science Foundation

Sub-Class of Project: NSFC Natural Science Foundation of China

Nature of Project: NSFC General Program

Supported by: National Natural Science Foundation of China (NSFC)

Project level: National

Project Number: 2

Classification of Disciplines: Engineering

Date of Project Approval: 2017-09-07

Scheduled completion time: 2021-12-31

Date of Project Completion: 2021-12-31

Date of Project Initiation: 2018-01-01

Project Approval Number: 61774064

Subsidy Amount: 69.0