·Research Projects
- [1] Steep-Slope Hysteresis-Free MoS2 Negative Capacitance Field-Effect Transistors with High Stability and Low Power Dissipation,Ministry of Science and Technology of China,1,2019-09-07-2023-12-31
- [2] Dual Gate Few-Layer MoS2 Field-Effect Transistors with High Performance and Low Power Dissipation,Ministry of Science and Technology of China,2,2017-09-07-2021-12-31
- [3] Small-scalled GeOI-based MOSFET with HfTiO/TaON/GeON stack high-k gate dielectric,Ministry of Science and Technology of China,3,2012-09-07-2016-12-31
- [4] Small-size InGaAs nMOSFET with ultra-thin HfTiON/GGO stack high-k gate dielectric,Ministry of Science and Technology of China,4,2011-09-07-2015-12-31
- [5] Charge-Trap Floating-Gate Memory with Small Size, Low Voltage, High Speed and Long Retention,Ministry of Science and Technology of China,5,2009-09-07-2012-12-31
- [6] "Optoelectronic and Microelectronic Devices and Integration" key R/D project: Hybrid integrated chip with high-mobility CMOS and infrared photonic devices,Ministry of Science and Technology of China,6,2023-12-31
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